Method of manufacture of an epitaxial semiconductor layer on an

Details Method of manufacture of an epitaxial semiconductor layer on an Method of manufacture of an epitaxial semiconductor layer on an

1975-01-10

1976-12-14

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Methods

156 7, 156 17, 252 793, 252 794, H01L 750

Patent

active

039973816

ABSTRACT:
A thin epitaxial layer of silicon is disposed on a supporting silicon substrate and a silicon oxide layer or other suitable layer is formed on the epitaxial layer. The substrate, epitaxial layer and oxide layer sandwich is bonded by the simultaneous application of heat and voltaic pressure to another oxidized substrate such that the epitaxial layer is sandwiched between the two substrates with the oxide layer at the sandwich interface. Alternatively, the substrates may be joined by bonding without the use of voltaic pressure by placing the substrates (parent and supporting) at approximately 900.degree. C. The substrates with the epitaxial layer is processed to remove a substantial portion of the silicon substrate with the final portion being removed by etching. When the final portion of the silicon substrate is removed by etching, exposing the epitaxial silicon layer, the etching rate changes dramatically and this is reflected in the byproduct concentration in the etchant solution. The etching process is immediately terminated when the epitaxial layer is fully exposed. After further finishing steps, the resulting product of this method is an epitaxial monocrystalline silicon layer of high crystalline perfection, separated by a silicon oxide layer from a supporting silicon substrate.

REFERENCES:
patent: 3536600 (1970-10-01), VanDijk et al.
patent: 3756877 (1973-09-01), Murauka et al.
patent: 3776788 (1973-12-01), Henker
RCA Review, vol. 31, No. 2, 6-1970, A New Technique for Etch Thinning Silicon Wafers by A. I. Stoller, R. F. Speers and S. Opresko, pp. 265-270.

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