Method of manufacture of a semiconductor device

Details Method of manufacture of a semiconductor device Method of manufacture of a semiconductor device

1977-02-11

1978-08-08

Goldberg, Howard N.

Metal working

Method of mechanical manufacture

Assembling or joining

29588, B01J 1700

Patent

active

041047869

ABSTRACT:
Disclosed is a semiconductor device and a method for the manufacture thereof. A semiconductor wafer with three stacked regions is provided. An inner region exhibits one conductivity type and the two outer regions exhibit the opposite conductivity type. Isolation regions of the opposite conductivity type are formed by the temperature gradient zone melting process to separate the wafer into a plurality of device regions. Peripheral grooves are cut in one major surface in each device region. The grooves extend into the interior region thus electrically isolating the portion of the major surface within the grooves from the other major surface. The grooves are filled with a passivation material.

REFERENCES:
patent: 3535774 (1970-10-01), Baker
patent: 3896477 (1975-07-01), Itutson
patent: 3908187 (1975-09-01), Sheldon et al.
patent: 3911471 (1975-10-01), Kooi
patent: 3972113 (1976-08-01), Nakata et al.
patent: 3979230 (1976-09-01), Anthony et al.
patent: 3982269 (1976-09-01), Torreno et al.
patent: 4010534 (1977-03-01), Anthony et al.

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