Method of manufacture of a semiconductor device

Details Method of manufacture of a semiconductor device Method of manufacture of a semiconductor device

1984-09-13

1986-12-16

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29574, 29571, 29576C, 148DIG55, 357 51, H01L 2166

Patent

active

046285903

ABSTRACT:
This invention discloses a semiconductor device, and method of manufacturing such device, which provides a high degree of moistureproofing, provides a high production yield, and in which defective elements can be replaced by the use of fuses. A circuit test of the device is conducted while at least part of each of a fuse and a bonding pad is exposed through a first passivation film covering a semiconductor substrate on which circuit elements such as MISFETs and capacitors are formed, and any defective elements are replaced by the use of fuses. Contamination of and damage to the elements during the test can thus be prevented. Thereafter, a second passivation film is formed so as to cover all the essential portions of the fuses and bonding pads. The exposure of cracks in the fuses and bonding pads is thus prevented, and the invasion of moisture, etc., into the lower layers below the fuses and bonding pads is also prevented, thereby improving the moistureproofing and reliability of the device.

REFERENCES:
patent: 3585712 (1968-12-01), Boncuk
patent: 3702025 (1972-11-01), Archer
patent: 3792319 (1974-02-01), Tsong
patent: 4413272 (1983-11-01), Mochiyuki et al.
Murarka, "Refractory Silicides for Integrated Circuits" J. Vac. Sci. Tech. 17, (4), Jul./Aug. 1980.

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