Method of manufacture of a schottky using platinum encapsulated

Details Method of manufacture of a schottky using platinum encapsulated Method of manufacture of a schottky using platinum encapsulated

1982-03-08

1983-08-16

Rutledge, L. Dewayne

Metal working

Method of mechanical manufacture

Electrical device making

427 84, 357 15, 156638, H01L 2948

Patent

active

043983448

ABSTRACT:
A schottky diode and process of manufacture therefor is disclosed wherein a schottky junction is formed between a tungsten schottky barrier metal and a silicon surface which has been treated to produce a single crystal surface by sintering thereto platinum which is encapsulated on its upper and lower surface with palladium layers. After the sintering operation, all traces of silicide are removed by etching and a tungsten or molybdenum schottky barrier layer is applied to the silicide-treated layer. The resultant schottky junction is capable of good operation at extremely high temperatures, for example 200.degree. C. and can be produced with high yield.

REFERENCES:
patent: 4206540 (1980-06-01), Gould

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