Method of manufacture a primos device

Details Method of manufacture a primos device Method of manufacture a primos device

1987-11-27

1989-05-16

Hearn, Brian E.

Fishing, trapping, and vermin destroying

43 62, 43 67, 43 72, 43985, 148DIG116, 148DIG163, 357 2311, 357 47, 357 55, H01L 2978

Patent

active

048309753

ABSTRACT:
A PRIMOS (Planar Recessed Isolated MOS) transistor and a method for fabricating same is described wherein the source and drain in a semiconductor body are separated by a recess. A gate oxide is disposed on the body in the recess, with conductive gate material thereon. Oxide regions are positioned on each side of the gate, such oxide regions being substantially thicker in cross-section than the gate oxide. The method described teaches fabrication of this device.

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