Method of making zinc-based transparent conductive film

Details Method of making zinc-based transparent conductive film Method of making zinc-based transparent conductive film

1994-07-14

1995-11-28

Nguyen, Nam

Coating processes

Direct application of electrical, magnetic, wave, or...

Ion plating or implantation

427523, C23C 1408

Patent

active

054706181

ABSTRACT:
A zinc oxide-based transparent conductive film containing of gallium or indium and having a resistivity of not more than 10.sup.-3 .OMEGA..cm is provided by evaporating a source of zinc oxide containing 0.5 to 5% by weight of gallium oxide or 0.3 to 4.5% by weight of indium oxide and depositing same onto a substrate after activating the vapor of the source by a plasma.

REFERENCES:
patent: 4336120 (1982-06-01), Sakakura et al.
patent: 4526802 (1985-07-01), Sato
T. Minami et al.: "Highly Conductive and Transparent Aluminum Doped Znic Oxide Thin Films Prepared by RF Magnetron Sputtering", Japanese Journal of Applied Physics, vol. 23, No. 5, May, 1984, pp. L280-L282.
T. Minami et al.: "Group III Impurity Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering", Japanese Journal of Applied Physics, vol. 24, No. 10, Oct., 1985, pp. L781-L784.
S. Shooji et al.: "Highly Conductive and Transparent Zinc Oxide Films Prepared by RF Magnetron Sputtering", Tsushin Gakkai Kenkyukai CPM84-8, pp. 55-62 [Partial Translation attached].
M. Machida et al.: "ZnO Piezoelectric Films Formed by RF Reactive Ion-Plating", Denshi Tsushin Gakkai-shi, vol. J62-C, No. 6, '79-5, pp. 358-364 [Partial Translation attached].
Qui, et al., "Air Heat Treatment of In-DOPED ZnO Thin Films", Solar Energy Materials 25 (1987), pp. 261-267.

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