Method of making zener diodes with selectively variable breakdow

Details Method of making zener diodes with selectively variable breakdow Method of making zener diodes with selectively variable breakdow

1976-08-20

1978-07-11

Dean, R.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29574, 29578, 148175, 148190, 357 13, 357 20, 357 90, H01L 2122, H01L 2166

Patent

active

040999980

ABSTRACT:
Zener diodes of selectively variable breakdown voltages ranging from a few voltages to several hundred volts are fabricated in monolithic integrated circuits by locating the edge of a P-N junction at the surface of a substrate within the gradient region of P-type diffusion. Methods for making the same are also described.

REFERENCES:
patent: 3378915 (1968-04-01), Zenner
patent: 3456168 (1969-07-01), Tatom
patent: 3490962 (1970-01-01), Duffy et al.
patent: 3602778 (1971-08-01), Ura et al.
patent: 3667009 (1972-05-01), Rugg
patent: 3677838 (1972-07-01), De Brebisson
patent: 3717516 (1973-02-01), Hatcher et al.
patent: 3765961 (1973-10-01), Mar
Sze, S. M., "Physics of Semiconductor Devices" Textbook, Wiley-Interscience, 1969, pp. 111-126.
Sze et al., "Avalanche Breakdown Voltages . . . Ge, Si, GaAr, and GaP", Applied Physics Letters, vol. 8, No. 5, Mar. 1, 1966, pp. 111-113.

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