Method of making virtual ground memory cell array

Details Method of making virtual ground memory cell array Method of making virtual ground memory cell array

1993-05-27

1994-04-26

Thomas, Tom

Fishing, trapping, and vermin destroying

437 43, 437 44, 437 48, 437229, H01L 2170

Patent

active

053066588

ABSTRACT:
A memory cell array for a nonvolatile memory device having single-transistor cells (10). Row lines (15) connect the control gates of each row of cells. Column lines (17) connect the drain regions (11) and source regions (12) of columns of cells, such that pairs of row-adjacent cells share a column line (17). Each shared column line (17) has two junctions for each pair of cells that share the column line. One junction is graded for source regions (12) and the other is abrupt for drain regions (11).

REFERENCES:
patent: 4804637 (1989-02-01), Smayling et al.
patent: 4851361 (1989-07-01), Schuman et al.
patent: 5019879 (1991-05-01), Chiu

Affiliated with

Also associated with

Rating

Method of making virtual ground memory cell array does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making virtual ground memory cell array, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making virtual ground memory cell array will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1711406