Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1980-10-30
1982-08-03
Roy, Upendra
Metal working
Method of mechanical manufacture
Assembling or joining
29571, 148187, 357 23, 357 91, B01J 1700, H01L 2978
Patent
active
043421490
ABSTRACT:
A method for manufacturing MNOS memory transistors with very short channel lengths in silicon gate technology. In a substrate of a first semiconductor type, source and drain zones of MNOS and MOS components of a second conductivity type opposite the first conductivity type are provided. The edges of gate electrodes, with reference to the plane of the substrate surface, lie perpendicularly and self-adjusting over the edges of the source and drain zones, whereby the source and drain zones generated in the substrate are manufactured by means of ion implantation upon employment of the gate electrodes as the implantation mask.
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Ohkura et al., IEEE Trans. Electron Devices, ED-26, (Apr. 1979), 430.
Jacobs Erwin
Schwabe Ulrich
Takacs Dezso
Roy Upendra
Siemens Aktiengesellschaft
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