Method of making vertical structure semiconductor devices...

Details Method of making vertical structure semiconductor devices... Method of making vertical structure semiconductor devices...

2005-04-27

2008-12-16

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S024000, C438S030000, C438S057000, C438S068000

Reexamination Certificate

active

07465592

ABSTRACT:
The invention provides a reliable way to fabricate a new vertical structure compound semiconductor device with improved light output and a laser lift-off processes for mass production of GaN-based compound semiconductor devices. A theme of the invention is employing direct metal support substrate deposition prior to the LLO by an electro-plating method to form an n-side top vertical structure. In addition, an ITO DBR layer is employed right next to a p-contact layer to enhance the light output by higher reflectivity. A perforated metal wafer carrier is also used for wafer bonding for easy handling and de-bonding. A new fabrication process is more reliable compared to the conventional LLO-based vertical device fabrication. Light output of the new vertical device having n-side up structure is increased 2 or 3 times higher than that of the lateral device fabricated with same GaN/InGaN epitaxial films.

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