Method of making vertical MOSFET with sub-trench source contact

Details Method of making vertical MOSFET with sub-trench source contact Method of making vertical MOSFET with sub-trench source contact

1996-10-22

1997-12-02

Niebling, John

Fishing, trapping, and vermin destroying

257328, 148DIG126, H01L 21265

Patent

active

056935471

ABSTRACT:
An integrated circuit transistor vertically oriented along a side wall of a shallow trench formed in a semiconductor substrate. The transistor includes a semiconductor substrate, preferably comprised of silicon, into which a shallow transistor trench has been formed. A trench floor of the transistor trench is vertically displaced below the upper surface of the semiconductor substrate by a trench depth. The transistor further includes a drain impurity distribution having a peak concentration that is vertically displaced a drain depth below the semiconductor substrate upper surface. The drain depth is less than the trench depth. The transistor further includes a channel impurity distribution having a peak concentration vertically displaced a channel depth below the substrate upper surface. The channel depth is greater than the drain depth, but less than the trench depth. The drain impurity distribution and the channel impurity distribution extend laterally to a first side wall of the transistor trench. The transistor further includes a source impurity distribution having a peak concentration vertically displaced a source depth below the substrate upper surface. The source depth is greater than the channel depth. The source impurity distribution further includes a source lower boundary vertically displaced a source boundary depth below the upper surface of the semiconductor substrate. The source impurity distribution extends laterally to a contact region of the semiconductor substrate below the trench floor. The transistor further includes a gate dielectric in contact with the first trench side wall and a conductive gate formed in contact with the gate dielectric.

REFERENCES:
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patent: 5424231 (1995-06-01), Yang
patent: 5474943 (1995-12-01), Hshieh et al.
patent: 5567634 (1996-10-01), Herbert et al.
patent: 5578508 (1996-11-01), Baba et al.
patent: 5583060 (1996-12-01), Hertrich et al.

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