Metal working – Method of mechanical manufacture – Electrical device making
Reexamination Certificate
2005-07-26
2005-07-26
Trinh, Minh (Department: 3729)
Metal working
Method of mechanical manufacture
Electrical device making
C029S593000, C445S024000, C445S049000, C445S050000, C445S051000
Reexamination Certificate
active
06920680
ABSTRACT:
A method of forming a vacuum microelectronic device including steps of forming at least one electron emitter on a substrate, applying a first electric field to move a portion of the at least one electron emitter in a direction toward the first electric field, and maintaining the at least one electron emitter in the direction after removing the first electric field.
REFERENCES:
patent: 4683399 (1987-07-01), Soclof
patent: 5796211 (1998-08-01), Graebner et al.
patent: 5817201 (1998-10-01), Creschner et al.
patent: 5872422 (1999-02-01), Xu et al.
patent: 5973444 (1999-10-01), Xu et al.
patent: 6023125 (2000-02-01), Yoshikawa et al.
patent: 6249080 (2001-06-01), Komoda et al.
patent: 6297592 (2001-10-01), Groren et al.
patent: 6448709 (2002-09-01), Chuang et al.
patent: 6495865 (2002-12-01), Johnson et al.
patent: 6630772 (2003-10-01), Bower et al.
patent: 2003/0041438 (2003-03-01), Wei et al.
patent: 2003/0042834 (2003-03-01), Dean et al.
patent: 1073090 (2001-01-01), None
patent: 2000-141056 (2000-05-01), None
Fishbine et al., “Buckytube cold field emitter array cathode experiments”, Mat. Res.Soc. Symp. Proc. vol. 359, 1995, pp. 93-98.
Zhang et al., “Plastic deformations of carbon nanotubes”, Physical Review Letters, Dec. 14, 1998, pp. 5346-5348.
Dean Kenneth Andrew
Wei Yi
Xie Chenggang
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