Method of making ultra dense dram cells

Details Method of making ultra dense dram cells Method of making ultra dense dram cells

1989-10-27

1990-04-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 38, 437 47, 437 60, 437203, 437228, 437919, H01L 21265

Patent

active

049200658

ABSTRACT:
This invention relates generally to dynamic random access, semiconductor memory arrays and more specifically relates to an ultra dense dynamic random access memory array. It also relates to a method of fabricating such arrays using a plurality of etch and refill steps which includes a differential etching step which is a key step in forming insulating conduits which themselves are adapted to hold a pair of field effect transistor gates of the adjacent transfer devices of one device memory cells. The differential etch step provides spaced apart device regions and an insulation region of reduced height between the trenches which space apart the memory cells. The resulting structure includes a plurality of rows of vertically arranged field effect transistors wherein the substrate effectively acts as a counterelectrode surrounding the insulated drain regions of each of the one device memory cells. A pair of gates are disposed in insulating conduits which run perpendicular to the rows of memory cells. Each gate in a conduit is disposed in insulated spaced relationship with a memory cell channel region which, in response to signals on the gate turns on a column of channel regions so as to permit the entry of charge into a selected storage region when a bitline associated with a particular cell is energized. The resulting array shows rows of pairs of memory cells wherein each cell of a pair is spaced from the other by a portion of the substrate acting as a counterelectrode and each of the pairs of memory cells is similarly separated from an adjacent pair by regions of conductive material acting as a counterelectrode.

REFERENCES:
patent: 4630088 (1986-12-01), Ogura et al.
patent: 4670768 (1987-06-01), Sunami et al.

Affiliated with

Also associated with

Rating

Method of making ultra dense dram cells does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making ultra dense dram cells, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making ultra dense dram cells will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-34446