Method of making tunable semiconductor laser

Details Method of making tunable semiconductor laser Method of making tunable semiconductor laser

1992-08-06

1994-02-08

Thomas, Tom

Fishing, trapping, and vermin destroying

437126, 437133, 148DIG95, 148DIG110, H01L 2120

Patent

active

052847918

ABSTRACT:
In a method of making a tunable twin guide (TTG) type tunable semiconductor laser, over the surface of a semiconductor substrate of one conductivity type, an active layer, a central layer of the opposite conductivity type, and a tuning layer, each being stripe-shaped and overlying the top of the preceding one is provided. This method is characterized in that the processing of semiconductor elements for defining the current path/optical waveguide inside the laser is carried out not by etching but by using selective epitaxy method such as metal organic vapor phase epitaxy (MOVPE). The use of selective MOVPE permits to form stripe-shaped layers at high precision and good uniformity, with consequent effects of minimizing scattering of laser light, increasing the efficiency of the drive power to laser light output conversion and enhancing the coupling efficiency with optical fibers. Besides thinner central layer that can be formed can contributes to enlarging the tunable bandwidth of laser light.

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patent: 4940672 (1990-07-01), Zavracky
patent: 4949350 (1990-08-01), Jewell et al.
patent: 4950622 (1990-08-01), Kwon et al.
patent: 5008893 (1991-04-01), Amann et al.
patent: 5070510 (1991-12-01), Konushi et al.

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