Method of making truly complementary and self-aligned bipolar an

Details Method of making truly complementary and self-aligned bipolar an Method of making truly complementary and self-aligned bipolar an

1994-03-15

1995-08-08

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG9, 257370, 257371, 257378, 437 27, 437 44, 437 59, 437200, H01L 21265

Patent

active

054398339

ABSTRACT:
A truly complementary bipolar transistor structure and a combined bipolar and CMOS transistor structure are disclosed, each including a silicide layer formed upon a substrate that acts as an extrinsic base and gate. Optionally, a layer of polysilicon can be formed between the silicide layer and the substrate. An oxide layer (LTO) is formed or deposited over the silicide layer by chemical vapor deposition (CVD). Selected regions are defined and etched using a photoresist layer. Subsequent steps of implanting, etching and metalization are performed to produce transistors with reduced gate and extrinsic base resistances. Polysilicon may be used, instead of metal, as a contact in one embodiment of the invention.

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D. J. Roulston, Bipolar Semiconductor Devices, Chapter 14, pp. 340-367, published by McGraw-Hill, Inc. (1990).
Schaber et al., "Process and Device Related Scaling Considerations for Polysilicon Emitter Bipolar Transistors", IEDM Technical Digest pp. 170-172 (1987).

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