Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1984-11-21
1986-02-04
Upendra, Roy
Metal working
Method of mechanical manufacture
Assembling or joining
29578, 148 15, 148187, 148DIG10, 357 34, 357 91, H01L 21263, H01L 2704, H01L 744
Patent
active
045676445
ABSTRACT:
An ISL structure is fabricated by a process in which impurities are introduced into a semiconductor substrate (10) of first type conductivity (P) to form major and minor portions (18 and 18a) of a first region of opposite second type conductivity (N). The minor portion has a lower net impurity concentration than the major portion and extends to a considerably lesser depth. An impurity is introduced into the major and minor portions to form a second region (24) of first type conductivity. An impurity is introduced into the second region to form a third region (30) of second type conductivity spaced laterally apart from the minor portion. Metallization is then performed to create at least one Schottky rectifying contact (32) with the major portion and ohmic contacts (38, 36, and 34) with the substrate and second and third regions.
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Dinardo J. A.
Mayer R. T.
Meetin R. J.
Signetics Corporation
Upendra Roy
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