Method of making transistors by ion implantations, electron beam

Details Method of making transistors by ion implantations, electron beam Method of making transistors by ion implantations, electron beam

1981-10-20

1983-11-15

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 29576T, 148187, 357 91, H01L 21263

Patent

active

044153724

ABSTRACT:
The invention provides a method for fabricating a semiconductor device which comprises the steps of ion-implanting an impurity into a monocrystalline semiconductor substrate; irradiating the region into which the impurity ions have been implanted with an accelerated electron beam under the conditions that the acceleration voltage is 20 to 200 KeV, and the current is 0.01 to 1 mA and the exposure dose is 10.sup.20 to 10.sup.15 /cm.sup.2 ; and carrying out annealing to form a semiconductor region of one conductivity type. According to the present invention, a semiconductor device can be fabricated which has fewer lattice defects and in which the lifetime of the carriers is long.

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Suski et al., Radiation Effects, 29 (1976), 137.
Greenwald et al., J. Appl. Phys., 50 (1979), 783.
Rai-Choudhury et al., IEEE Trans. Electron Devices, 23 (1976), 814.
Ratnakumar et al., J. Vac. Sci. Technol., 16 (1979), 1843.
Neukermans et al., J. Vac. Sci. Technol., 16 (1979), 1847.
Yamamoto et al., J. Appl. Phys., 53 (1982), 276.

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