Method of making toroidal MRAM cells

Details Method of making toroidal MRAM cells Method of making toroidal MRAM cells

2005-08-30

2005-08-30

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C257S295000, C365S209000

Reexamination Certificate

active

06936479

ABSTRACT:
This invention provides a method of making nano-scaled toroidal magnetic memory cells, such as may be used, for example, in magnetic random access memory (MRAM). In a particular embodiment a semiconductor wafer substrate is prepared and a conductor layer is provided upon the wafer. A hard layer is deposited upon the first conductor. From the hard layer, ion etching is employed to form an annular wall about a pillar, the wall and pillar defining an annular slot. A ferromagnetic data layer is deposited within the annular slot and a junction stack is then provided upon at least a portion of the data layer. A dielectric is applied to insulate the structure and then planarized to expose the pillar.

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Zhu, Jian-Gang et al., “Ultrahigh Density Vertical Magnetoresistive Random Access Memory (invited),” Journal of Applied Physics, May 2000, vol. 87, No. 9, pp. 6668-6673.

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