Method of making three dimensional NAND memory

Details Method of making three dimensional NAND memory Method of making three dimensional NAND memory

2007-03-27

2010-06-29

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

With electrical circuit layout

C257SE21598

Reexamination Certificate

active

07745265

ABSTRACT:
A method of making a monolithic, three dimensional NAND string, includes forming a select transistor, forming a first memory cell over a second memory cell, forming a first word line for the first memory cell, forming a second word line for the second memory cell, forming a bit line, forming a source line, and forming a select gate line for the select transistor. The first and the second word lines are not parallel to the bit line, and the first and the second word lines extend parallel to at least one of the source line and the select gate line.

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