Method of making thin film transistor with zinc oxide based...

Details Method of making thin film transistor with zinc oxide based... Method of making thin film transistor with zinc oxide based...

2011-07-19

2011-07-19

Geyer, Scott B (Department: 2812)

Semiconductor device manufacturing: process

Having metal oxide or copper sulfide compound semiconductor...

C438S151000, C438S482000, C438S483000

Reexamination Certificate

active

07981720

ABSTRACT:
According to a method of fabricating an oxide thin-film transistor, when a thin-film transistor is fabricated by using an amorphous zinc oxide (ZnO)-based semiconductor as an active layer, it may be possible to reduce a tact time as well as attain an enhanced element characteristic by depositing an insulation layer having an oxide characteristic in-situ through controlling oxygen (O2) flow subsequent to depositing an oxide semiconductor using a sputter, and the method may include the steps of forming a gate electrode on a substrate; forming a gate insulation layer on the substrate; depositing an amorphous zinc oxide-based semiconductor layer made of an amorphous zinc oxide-based semiconductor and an amorphous zinc oxide-based insulation layer having an oxide characteristic in-situ on the gate insulation layer; forming an active layer made of the amorphous zinc oxide-based semiconductor over the gate electrode while at the same time forming a channel protection layer made of the amorphous zinc oxide-based insulation layer on a channel region of the active layer; and forming a source electrode and a drain electrode electrically connected to a source region and a drain region of the active layer over the active layer.

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