Method of making thin film transistor with light-absorbing layer

Details Method of making thin film transistor with light-absorbing layer Method of making thin film transistor with light-absorbing layer

1995-11-01

1997-03-18

Niebling, John

Fishing, trapping, and vermin destroying

437174, H01L 2184

Patent

active

056122357

ABSTRACT:
A self-aligned polysilicon thin film transistor, and a method for manufacturing it, is descrbed. An insulating substrate is provided. A gate electrode is formed on the insulating substrate. A protective light-absorbing layer is formed over the gate electrode and over the insulating substrate. The protective light-absorbing layer is patterned. A gate dielectric layer is formed over the protective light-absorbing layer and over the insulating substrate. A layer of amorphous silicon is formed over the gate dielectric layer. A photoresist mask is formed over the layer of amorphous silicon, aligned with the protective light-absorbing layer. The amorphous silicon layer is implanted with a conductivity-imparting dopant in source/drain regions not protected by the photoresist mask. The photoresist mask is removed. The amorphous silicon layer is laser-annealed, whereby doped polysilicon is formed in the source/drain regions, and undoped polysilicon is formed in areas between the source/drain regions. Source and drain electrodes of electrically conductive material are formed in contact with the source/drain regions.

REFERENCES:
patent: 5130263 (1992-07-01), Possin et al.
patent: 5371025 (1994-12-01), Sung
patent: 5371398 (1994-12-01), Nishihara
patent: 5409851 (1995-04-01), Oh
patent: 5427962 (1995-06-01), Sasaki et al.
patent: 5534716 (1996-07-01), Takemura

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