Method of making thin film field effect transistors for a liquid

Details Method of making thin film field effect transistors for a liquid Method of making thin film field effect transistors for a liquid

1985-06-19

1987-11-10

Ozaki, George T.

Fishing, trapping, and vermin destroying

148DIG77, 148DIG150, 156643, 156649, 357 237, 357 47, 357 56, 437101, 437235, H01L 21425

Patent

active

047047844

ABSTRACT:
The invention relates to a method for the manufacture of field effect transistors of the coplanar and self-aligned type, obtained in thin film form on an insulating substrate.
As a result of electrode self-alignment and ion implantation, the method makes it possible to use only three masking levels.
The invention is applicable to the field of large surface microelectronics and particularly to the control and addressing of a flat liquid crystal screen or an image sensor.

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patent: 4596071 (1986-06-01), Kita
Ast, "Materials Limitations of Amorphous-Si:H Transistors", IEEE Transactions on Electron Devices, vol. ED-30, #5, May 1985.
Ghondi, VLSI Fabrication Principles, John Wiley & Sons, New York, 1983, pp. 346-348.
IEEE Transactions on Electron Devices, vol. ED-30, No. 5, May 1983, pp. 532-539, IEEE, New York, U.S. D.G. AST: "Materials Limitations of Amorphous-Si:H Transistors".

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