Semiconductor device manufacturing: process – Electron emitter manufacture
Patent
1994-12-28
1998-03-10
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Electron emitter manufacture
427 77, 427 78, H01J 4100
Patent
active
057260761
ABSTRACT:
The invention is directed to continuous dynodes formed by thin-film processing techniques. According to one embodiment of the invention, a continuous dynode is formed by reacting a chemical vapor in the presence of a substrate at a temperature and pressure sufficient to result in chemical vapor deposition. In another embodiment, the layer is formed by liquid phase deposition and in another embodiment, the layer is formed by nitriding or oxidizing a substrate.
REFERENCES:
patent: Re31847 (1985-03-01), Luckey
patent: 3675063 (1972-07-01), Spindt et al.
patent: 3911167 (1975-10-01), Linder
patent: 3959038 (1976-05-01), Gutierrez et al.
patent: 4015159 (1977-03-01), Zipfel, Jr.
patent: 4051403 (1977-09-01), Feingold et al.
patent: 4073989 (1978-02-01), Wainer
patent: 4093562 (1978-06-01), Kishimoto
patent: 4095132 (1978-06-01), Fraioli
patent: 4236073 (1980-11-01), Martin
patent: 4352985 (1982-10-01), Martin
patent: 4454422 (1984-06-01), Persyk
patent: 4468420 (1984-08-01), Kawahara et al.
patent: 4558144 (1985-12-01), Fay et al.
patent: 4563250 (1986-01-01), Becker et al.
patent: 4577133 (1986-03-01), Wilson
patent: 4757229 (1988-07-01), Schmidt et al.
patent: 4780395 (1988-10-01), Saito et al.
patent: 4800263 (1989-01-01), Dillon et al.
patent: 4825118 (1989-04-01), Kyushima
Silicon Processing for the VLSI Era, vol. 1, Wolf and Tauber, Lattice Press, 1986, pp. 161-165, 331-333 and 374-377.
Lampton, Michael "The Microchannel Image Intensifier", Sci Am., Nov. 1981, vol. 245, No. 5, pp. 62-71.
Washington, D. "Technology of Channel Plate Manufacture", Acta Electronica, vol. 14, No. 2, 1971, pp. 201-224.
Trap, H.J.L. "Electronic Conductivity in Oxide Glasses", Acta Electronica, vol. 14, No. 1, 1971, pp. 41-77.
Hill, G. "Secondary Electron Emission and Compositional Studies on Channel Plate Glass Surfaces", Advances in Elect., vol. 40A, p. 153.
Tyutikov, A.M. "Study of the Surface Layer Composition and the Secondary Electron Emission Coeficient of Lead Silicate Glass", Sov. J. Opt. Technol. 47(4), Apr. 1980, pp. 201-207.
S. Meonova, Ju. "Surface Compositional Studies of Heat Reduced Lead Silicate Glass", Journal of Non-Crystalline Solids, 57, (1983) 177-187.
Horton Jerry Randall
Tasker G. William
Bowers Jr. Charles L.
Center for Advanced Fiberoptic Applications
Whipple Matthew
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