Method of making the film transistor with all-around gate electr

Details Method of making the film transistor with all-around gate electr Method of making the film transistor with all-around gate electr

1994-09-30

1998-01-06

Niebling, John

Fishing, trapping, and vermin destroying

437 40, 437203, H01L 2184, H01L 21265

Patent

active

057054053

ABSTRACT:
A semiconductor device includes an insulating support. A strip of semiconductor material has two ends in contact with the insulating support and a midsection extending between the ends. A dielectric layer encircles the midsection, and a conductive layer encircles the dielectric layer. The conductive layer has a substantially constant width such that a gate electrode formed within the conductive layer is fully self-aligned with drain and source regions formed within the ends.

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