Method of making temperature sensitive device and device made th

Electrical resistors – Resistance value responsive to a condition – Ambient temperature

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29612, 427101, 427103, 4273831, H01C 304, H01C 702, B05D 512

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043238750

ABSTRACT:
A method of making a thin nickel film temperature sensitive device with a relatively high positive temperature coefficient of resistance utilizing a film of nickel deposited from a bulk nickel source onto an electrically insulating substrate, and device made thereby including the step of heat treating a resistor element having a thin film of nickel deposited on an electrically insulating substrate by heating in a reducing atmosphere to a peak temperature of at least 550.degree. C., over a heating cycle of at least about 20 minutes. The nickel film of the heat treated resistor element has a selected temperature coefficient of resistance which is at least 60% of the value of the coefficient for the bulk nickel and a sheet resistance of at least one ohm per square which properties are determined by the heat treating temperature and cycle time, and the thickness of the nickel film. The resistor element can be made by vacuum depositing the nickel film to the desired thickness onto the insulating substrate, and affixing terminations to the ends of the resistor element and applying a protective outer coating to the nickel film after the heat treating of the element.

REFERENCES:
patent: 2847325 (1958-08-01), Riseman et al.
patent: 3660158 (1972-05-01), Chen et al.
patent: 3748174 (1973-07-01), Chen et al.
Marton, J. P., et al, "A Sensitive Thin Film Temperature Sensor", International Electrical, Electronics Conference and Exposition, Paper No. 77184, Toronto, Canada, Sep. 26-28, 1977, Report pp. 130-131.
"Thin Film Nickel Resistance Thermometers," by H. Burkard, VIDE, vol. 196, Suppl., 1979, pp. 79-83.
"Structural and Electrical Properties of Chromium and Nickel Films Evaporated in the Presence of Oxygen," K. Hieber and L. Lassak, Thin Solid Films, 20 (1974) pp. 63-73.

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