Method of making symmetrically controlled implanted regions usin

Details Method of making symmetrically controlled implanted regions usin Method of making symmetrically controlled implanted regions usin

1987-06-12

1988-09-13

Roy, III, Upendra

Fishing, trapping, and vermin destroying

357 91, 437 20, 437 35, 437 36, 437930, H01L 21265

Patent

active

047710128

ABSTRACT:
A method of fabricating a field effect transistor, wherein impurity diffusion layers of source and drain are formed by an ion implantation method using the gate electrode as the mask by inclining the semiconductor substrate with respect to the ion beam incident direction so as to prevent the channeling effect and also rotating it in planarity with respect to the ion beam scanning plane. As a result, impurity diffusion layers can be formed symmetrically with respect to the gate electrode.

REFERENCES:
patent: 4086694 (1978-05-01), Rangoon
patent: 4232439 (1980-11-01), Shibata
patent: 4325747 (1982-06-01), Ristow
patent: 4329186 (1982-05-01), Kotecha et al.
patent: 4335503 (1982-06-01), Evans, Jr. et al.
patent: 4377899 (1983-03-01), Otani et al.
patent: 4390391 (1983-06-01), Fujita et al.
patent: 4404233 (1983-09-01), Ikeda et al.
patent: 4444616 (1984-04-01), Fujita et al.
patent: 4466178 (1984-08-01), Soclof
patent: 4508056 (1985-04-01), Bruel et al.
patent: 4604150 (1986-08-01), Lin

Affiliated with

Also associated with

Rating

Method of making symmetrically controlled implanted regions usin does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making symmetrically controlled implanted regions usin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making symmetrically controlled implanted regions usin will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-806803