Method of making symmetrically controlled implanted regions usin

Details Method of making symmetrically controlled implanted regions usin Method of making symmetrically controlled implanted regions usin

1993-01-14

1995-09-12

Kunemund, Robert

Fishing, trapping, and vermin destroying

437 35, 437 44, 437 45, H01L 21265

Patent

active

RE0350362

ABSTRACT:
A method of fabricating a field effect transistor, wherein impurity diffusion layers of source and drain are formed by an ion implantation method using the gate electrode as the mask by inclining the semiconductor substrate with respect to the ion beam incident direction so as to prevent the channeling effect and also rotating it in planarity with respect to the ion beam scanning plane. As a result, impurity diffusion layers can be formed symmetrically with respect to the gate electrode.

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