Method of making surface emission type semiconductor laser

Details Method of making surface emission type semiconductor laser Method of making surface emission type semiconductor laser

1992-12-31

1994-10-18

Thomas, Tom

Fishing, trapping, and vermin destroying

437126, 437133, 437905, 148DIG95, H01L 2120

Patent

active

053568320

ABSTRACT:
A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, the layers including at least a cladding layer in the semiconductor layers being formed into at least one column-like semiconductor layer extending in a direction perpendicular to the semiconductor substrate, and a II-VI group compound semiconductor epitaxial layer buried around the at least one column-like semiconductor layer. If a plurality of column-like semiconductor layers are to be formed by a separation groove, these column-like semiconductor layers are separated from one another, the II-VI group compound semiconductor epitaxial layer being buried in the separation groove.

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