Method of making substrates for the growth of 3C-silicon carbide

Details Method of making substrates for the growth of 3C-silicon carbide Method of making substrates for the growth of 3C-silicon carbide

1995-06-07

1997-08-05

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step acting on the...

117104, 4272481, C30B 2502

Patent

active

056537980

ABSTRACT:
A substrate for the growth of monocrystalline .beta.-SiC is formed by providing a body of monocrystalline hexagonal material having a planar surface with a lattice parameter that is within .+-.5% of the lattice parameter of 6H.alpha.-SiC in the basal plane and growing a body of monocrystalline cubic material on the surface to provide a planar cubic material surface that is without grain boundaries, subgrain boundaries, double positioning boundaries, and pits. The cubic material, for example TiC, ZrC, HfC, or TiN, has a rock salt structure and a lattice parameter within .+-.5% of the lattice parameter of .beta.-SiC. Monocrystalline .beta.-SiC can be nucleated and grown on the surface of the cubic material.

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