Method of making staggered gate MOSTFT

Details Method of making staggered gate MOSTFT Method of making staggered gate MOSTFT

1993-05-05

1994-04-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437913, 437915, 148DIG105, 148DIG106, 148DIG150, H01L 21265

Patent

active

053004469

ABSTRACT:
On an insulating film (12) covering the surface of a semiconductor substrate (10), a gate electrode layer (14), a gate insulating film (16), and a semiconductor layer (18) such as silicon are sequentially deposited to form an under-gated MOS transistor. A flat coating film such as resist is formed covering the semiconductor layer (18). The coating film is then etched back to expose the surface of the semiconductor layer (18) at the area above the gate electrode layer (14). The left coating film is used as the mask for the selective growth of a mask material layer (24) such as tungsten on the exposed surface of the semiconductor layer (18) with a side-projection. After removing the left coating film, impurity ions such as BF2 are selectively injected in the semiconductor layer (18) using the mask material layer (24) as the mask to form a source region (18S) and a drain region (18D).

REFERENCES:
patent: 4372033 (1983-02-01), Chiao
patent: 4603468 (1986-08-01), Lam
patent: 4628589 (1986-12-01), Sundaresan
patent: 4651408 (1987-03-01), MacElwee et al.
patent: 4656731 (1987-04-01), Lam et al.
patent: 5153145 (1992-10-01), Lee et al.
patent: 5158898 (1992-10-01), Hayden et al.

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