Fishing – trapping – and vermin destroying
Patent
1994-04-14
1996-03-12
Fourson, George
Fishing, trapping, and vermin destroying
437 46, 437941, 437968, H01L 2184
Patent
active
054985579
ABSTRACT:
A thin film transistor in which a device active layer is formed on an insulation film. In which an interface state density present at the interface between the active layer and the insulation film is set to less than 1.times.10.sup.11 /cm.sup.2. The characteristics of TFT can be enhanced by decreasing the leak current and SRAM memory cell can be provided with easy design for the process and the structure while avoiding increase in the resistance and additional capacitance and ensuring voltage withstand.
REFERENCES:
patent: 4797108 (1989-01-01), Crowther
patent: 5198379 (1993-03-01), Adan
Kimura Tadayuki
Naiki Ihachi
Negishi Michio
Sasaki Masayoshi
Booth Richard A.
Fourson George
Sony Corporation
LandOfFree
Method of making SRAM to improve interface state density utilizi does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of making SRAM to improve interface state density utilizi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making SRAM to improve interface state density utilizi will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2099551