Method of making SRAM to improve interface state density utilizi

Details Method of making SRAM to improve interface state density utilizi Method of making SRAM to improve interface state density utilizi

1994-04-14

1996-03-12

Fourson, George

Fishing, trapping, and vermin destroying

437 46, 437941, 437968, H01L 2184

Patent

active

054985579

ABSTRACT:
A thin film transistor in which a device active layer is formed on an insulation film. In which an interface state density present at the interface between the active layer and the insulation film is set to less than 1.times.10.sup.11 /cm.sup.2. The characteristics of TFT can be enhanced by decreasing the leak current and SRAM memory cell can be provided with easy design for the process and the structure while avoiding increase in the resistance and additional capacitance and ensuring voltage withstand.

REFERENCES:
patent: 4797108 (1989-01-01), Crowther
patent: 5198379 (1993-03-01), Adan

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