Method of making split gate LSI VMOSFET

Details Method of making split gate LSI VMOSFET Method of making split gate LSI VMOSFET

1978-11-27

1980-06-03

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 357 23, 357 55, 357 91, H01L 2702, H01L 2704, H01L 2906

Patent

active

042060052

ABSTRACT:
A split gate VMOSFET having an enhancement transistor and a depletion load transistor on opposing sidewalls of a V-groove region. In the process, a differential oxidation rate due to the different crystal orientations of the substrate is used to complete device fabrication in a relatively simple manner. The resultant process steps make it possible to fabricate a VMOSFET having symmetrical geometry in which a transfer gate can be easily implemented.

REFERENCES:
patent: 4003036 (1977-01-01), Jenne
patent: 4037306 (1977-07-01), Gutteridge et al.
patent: 4047195 (1977-09-01), Allison
patent: 4047975 (1977-09-01), Widman
patent: 4065783 (1977-12-01), Ouyang
patent: 4084175 (1978-04-01), Ouyang
patent: 4109270 (1978-08-01), Von Basse et al.
patent: 4116720 (1978-09-01), Vinson
patent: 4119996 (1978-10-01), Jhabvala
patent: 4126881 (1978-11-01), Von Basse et al.
patent: 4131907 (1978-12-01), Ouyang

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