Method of making split gate flash EEPROM cell

Details Method of making split gate flash EEPROM cell Method of making split gate flash EEPROM cell

1996-03-13

1997-07-29

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 50, 437 70, H01L 218247

Patent

active

056521618

ABSTRACT:
The flash EEPROM cell of split-gate type according to the present invention can prevent the degradation of the tunnel oxide film of the cell due to the band-to-band tunneling and the secondary hot carrier which are generated by a high electric field formed at the overlap region between the junction region and the gate electrode when programming and erasure operations are performed by a high voltage to the structure in which the tunneling region is separated from the channel with a thick insulation film.

REFERENCES:
patent: 5008212 (1991-04-01), Chen
patent: 5049515 (1991-09-01), Tzeng
patent: 5429969 (1995-07-01), Chang
patent: 5445984 (1995-08-01), Hong et al.

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