Method of making solid-state imaging device

Details Method of making solid-state imaging device Method of making solid-state imaging device

1992-11-10

1993-08-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 30, 437154, 437158, H01L 21339

Patent

active

052388646

ABSTRACT:
A method for producing a solid-state imaging device including a photodetector including implanting two different dopant impurity ions, each producing the second conductivity type and having different diffusion coefficients in a first conductivity type semiconductor layer; thermally diffusing the implanted ions to produce a second conductivity type region including a relatively deep second conductivity type subregion and a relatively shallow second conductivity type region having a higher dopant impurity concentration than said relatively deep second conductivity type subregion; forming a charge transfer electrode on said semiconductor layer such that an edge of said electrode lies adjacent part of the junction between said semiconductor layer and said second conductivity type region; and implanting a dopant impurity producing the first conductivity type in said second relatively shallow second conductivity type subregion using said charge transfer electrode as a mask to produce a first conductivity type impurity diffusion region shallower than said relatively shallow second conductivity type subregion.

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Teranishi et al., "No Image Lag Photodiode Structure in the In-Line CCD Image Sensor", IEEE Electron Devices Society, 1982, pp. 324-327.

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