Method of making SOI recrystallized layers by short spatially un

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156603, 156DIG80, 427 531, 437 21, 437 84, 148DIG4, 148DIG93, 148DIG77, H01L 21265, H01L 21208

Patent

active

047511931

ABSTRACT:
Method is provided for manufacturing large crystalline and monocrystalline semiconductor-on-insulator devices.

REFERENCES:
patent: 4350537 (1982-09-01), Young et al.
patent: 4356384 (1982-10-01), Gat
patent: 4461670 (1984-07-01), Celler et al.
patent: 4482393 (1984-11-01), Nishiyama et al.
patent: 4564403 (1986-01-01), Hayafuji et al.
patent: 4662949 (1987-05-01), Inoue et al.
Dutartre, Appl. Phys. Letts. 48, (1986) 350.
Downer et al, Phys. Rev. Letts. 56, (1986) 761.
Seidel et al, J. Appl. Phys. 57, (1985) 1317.
Scharff et al, Phys. Stet. Solidi 74a, (1982) 545.
Robinson et al, in Mat. Res. Soc. Symp. 33, (1984) p. 71, ed. Lam et al.
Usami et al, IEEE Electron Device Letts. EDL-4, (1983) 166.
Cohen et al, Appl. Phys. Letts. 33, (1978) 751.
Bomke et al, Appl. Phys. Letts. 33, (1978) 955.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of making SOI recrystallized layers by short spatially un does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making SOI recrystallized layers by short spatially un, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making SOI recrystallized layers by short spatially un will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-504969

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.