Method of making single-step trenches using resist fill and rece

Details Method of making single-step trenches using resist fill and rece Method of making single-step trenches using resist fill and rece

1996-05-23

1997-04-08

Niebling, John

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

438949, 438561, H01L 218242

Patent

active

056187513

ABSTRACT:
A trench capacitor with a buried plate is formed with a single etching process by the expedient of filling the trench so formed and lined with diffusion source material with resist by baking and reflowing the resist which also serves to adjust exposure sensitivity of the resist such that exposure and development of the resist removes the resist to a repeatable and uniform depth. Remaining resist allows etching of the diffusion source layer to a very accurate dimension. Thus only a readily formed oxide or TECS layer is needed to confine impurities during diffusion to form the buried plate. An isolation collar can be formed after recess of the fill to avoid formation of step corners and erosion of the isolation collar by repeated fill and etch back processes while permitting maximum capacitance to be achieved for a given trench "footprint".

REFERENCES:
patent: 4665007 (1987-05-01), Cservak et al.
patent: 4666556 (1987-05-01), Fulton et al.
patent: 4906590 (1990-03-01), Kanetaki et al.
patent: 4945069 (1990-07-01), Carter
patent: 4994409 (1991-02-01), Yoon et al.
patent: 4999312 (1991-03-01), Yoon
patent: 5096849 (1992-03-01), Beilstein, Jr. et al.
patent: 5521114 (1996-05-01), Rajeevakumar
patent: 5545583 (1996-08-01), Lam et al.
"Trench Capacitor Using Selective Polysilicon"; B.J. Ginsberg and J.L. Mauer; IBM Technical Disclosure Bulletin, vol. 31, No. 2, Jul. 1988; pp. 421-422.

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