Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2011-04-19
2011-04-19
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S479000, C438S485000, C438S935000, C118S7230MW, C136S258000, C257SE21297, C257SE31048
Reexamination Certificate
active
07927907
ABSTRACT:
The invention relates to a method for producing solar cells comprising at least one p-i-n layer sequence containing micro-crystalline layers with the aid of a PECVD method. Said method is characterised in that all layers of the p-i-n layer sequence are deposited in a single-chamber process. The electrodes are interspaced at a distance of between 5 and 15 mm and the gas is distributed by means of a shower-head gas inlet, which guarantees a homogeneous distribution of the gas over the substrate. SiH4gas streams with values of between 0.01 and 3 sccm/cm2are added with a process pressure of between 8 and 50 hPa. The heater temperature is set at between 50 and 280° C. and the HF output is between 0.2 and 2 watt/cm2. The H2gas streams have values of between 0.3 and 30 sccm/cm2, in particular between 0.3 and 10 sccm/cm2.
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Rech Bernd
Repmann Tobias
Forschungszentrum Julich GmbH
Lindsay, Jr. Walter L
Myers Jonathan
Pompey Ron
Wilford Andrew
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