Method of making silicon quantum wires

Details Method of making silicon quantum wires Method of making silicon quantum wires

1995-06-01

1997-05-06

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

257 14, 257103, H01L 4700

Patent

active

056273827

ABSTRACT:
A method of making semiconductor quantum wires, and a light emitting device employing such wires, employs a semiconductor wafer as starting material. The wafer is weakly doped p type with a shallow heavily doped p layer therein for current flow uniformity purposes. The wafer is anodized in 20% aqueous hydrofluoric acid to produce a layer 5 microns thick with 70% porosity and good crystallinity. The layer is subsequently etched in concentrated hydrofluoric acid, which provides a slow etch rate. The etch increases porosity to a level in the region of 80% or above. At such a level, pores overlap and isolated quantum wires are expected to form with diameters less than or equal to 3 nm. When excited, the etched layer exhibits photoluminescence emission at photon energies well above the silicon bandgap (1.1 eV) and extending into the red region (1.6-2.0 eV) of the visible spectrum.

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