Method of making silicon-on-sapphire FET

Details Method of making silicon-on-sapphire FET Method of making silicon-on-sapphire FET

1982-03-22

1983-07-19

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 148 15, 148187, 357 22, 357 91, H01L 21225, H01L 21308

Patent

active

043935788

ABSTRACT:
Junction and metal-semiconductor field effect transistors have a sapphire substrate to realize isolation and reduced capacitance, and have a self-aligned gate to minimize source parasitic resistance. A lightly doped, opposite conductivity type region under the channel forces carriers to flow near the silicon surface where mobility is high; this region is depleted at all times by the P-N junction built-in voltage and acts as an insulator. These devices serve as switches in high speed logic applications and as microwave amplifiers.

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patent: 4198250 (1980-04-01), Jecmen
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patent: 4201603 (1980-05-01), Scott, Jr. et al.
patent: 4222164 (1980-09-01), Triebwasser
patent: 4252574 (1981-02-01), Fabula
patent: 4253229 (1981-03-01), Yeh et al.
patent: 4277883 (1981-07-01), Kaplan
Darley et al. IEDM Tech. Digest, Washington, D.C., Dec. 1978 (62-65).

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