Method of making silicon-on-insulator islands

Details Method of making silicon-on-insulator islands Method of making silicon-on-insulator islands

1989-01-18

1990-01-30

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 60, 437 84, 437225, 437249, 148DIG150, H01L 2100, H01L 2102, H01L 21205, H01L 21306

Patent

active

048973661

ABSTRACT:
A silicon-on-insulator (SOI) semiconductor device is made by forming a layer of single crystalline silicon on the surface of an insulating substrate. Portions of the silicon layer are removed, such as by etching, to form islands of the single crystalline silicon on the substrate with the islands having sharp corners between their side walls and their top surface. The silicon islands are then exposed to vapors of hydrogen chloride which etch the corners and form the islands with smooth, rounded corners between the side walls and the top surface.

REFERENCES:
patent: 4016016 (1977-04-01), Ipri
patent: 4249960 (1981-02-01), Schnable et al.
patent: 4496418 (1985-01-01), Ham
patent: 4522662 (1985-06-01), Bradbury et al.
patent: 4549926 (1985-10-01), Corboy, Jr. et al.
patent: 4578142 (1986-03-01), Corboy, Jr. et al.
patent: 4615762 (1986-10-01), Jastrzebski et al.
patent: 4637127 (1987-01-01), Kurogi et al.
Smeltzer, R., Dielectric Integrity of the Gate Oxide in RCA Review, vol. 45, Jun. 1984.

Affiliated with

Also associated with

Rating

Method of making silicon-on-insulator islands does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making silicon-on-insulator islands, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making silicon-on-insulator islands will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1923378