Method of making silicon material with enhanced surface mobility

Details Method of making silicon material with enhanced surface mobility Method of making silicon material with enhanced surface mobility

1990-09-24

1993-03-30

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 24, 437 83, 156603, H01L 21322

Patent

active

051983710

ABSTRACT:
A new-type silicon material is produced by hydrogen ion implantation and subsequent annealing, the annealing being preferably in two steps. The present invention raises surface mobility of a silicon wafer and produces a buried high-resistivity layer beneath a silicon surface layer. The resulting products are particularly useful for the improvement of yield and speed and radiation hardness of very large scale integrated circuits.

REFERENCES:
patent: 4509990 (1985-04-01), Vasudev
patent: 4837172 (1989-06-01), Mizuno et al.
patent: 4885257 (1989-12-01), Matsushita
Jianmig Li, "A New Semiconductor Substrate Formation by Hydrogen Ion Implantation into Silicon", Chinese Journal of Semiconductors, vol. 9, No. 4, 1988.

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