Method of making silicon material with enhanced surface mobility

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437 24, 437 83, 156603, H01L 21322

Patent

active

051983710

ABSTRACT:
A new-type silicon material is produced by hydrogen ion implantation and subsequent annealing, the annealing being preferably in two steps. The present invention raises surface mobility of a silicon wafer and produces a buried high-resistivity layer beneath a silicon surface layer. The resulting products are particularly useful for the improvement of yield and speed and radiation hardness of very large scale integrated circuits.

REFERENCES:
patent: 4509990 (1985-04-01), Vasudev
patent: 4837172 (1989-06-01), Mizuno et al.
patent: 4885257 (1989-12-01), Matsushita
Jianmig Li, "A New Semiconductor Substrate Formation by Hydrogen Ion Implantation into Silicon", Chinese Journal of Semiconductors, vol. 9, No. 4, 1988.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of making silicon material with enhanced surface mobility does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making silicon material with enhanced surface mobility, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making silicon material with enhanced surface mobility will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1280676

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.