Method of making silicon-insulator-polysilicon infrared image de

Details Method of making silicon-insulator-polysilicon infrared image de Method of making silicon-insulator-polysilicon infrared image de

1978-04-13

1979-03-06

Dean, R.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29571, 29572, 148 15, 156657, 156659, 156662, 250332, 250370, 357 24, 357 30, 357 45, 357 49, 357 56, H01L 2120, H01L 2714

Patent

active

041429257

ABSTRACT:
A layer of epitaxial silicon is grown on a silicon growth substrate, a thin layer of silicon dioxide or other suitable insulator is grown (in the case of silicon dioxide) or deposited (for other insulators) on the epitaxial layer, and a thick layer of polysilicon is grown on the dioxide layer. The silicon growth substrate is then removed, and the epitaxial layer is etched to form islands on the insulator layer. Some of the islands are doped to form an array of infrared sensitive detectors, and a large island is doped to act as CCD region. Electrical leads are fabricated, some to provide drive and output lines for the CCDs, other to provide connections of the detectors to respective CCDs, and yet others to provide common leads for the detectors.

REFERENCES:
patent: 3423651 (1969-01-01), Legat et al.
patent: 3806729 (1974-04-01), Caywood
patent: 3829889 (1974-08-01), Allison et al.
patent: 3849651 (1974-11-01), Ennulat
patent: 3883437 (1975-05-01), Nummedal et al.
patent: 4050979 (1977-09-01), Smeltzer et al.
patent: 4079507 (1978-03-01), King et al.
patent: 4093957 (1978-06-01), King et al.
Steckl et al., "Theoretical Analysis . . . IRCCD Serial Scanning," Appl. f. on Charge Coupled Dev., Proceedings, San Diego, Ca., 1973, pp. 247-258.

Affiliated with

Also associated with

Rating

Method of making silicon-insulator-polysilicon infrared image de does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making silicon-insulator-polysilicon infrared image de, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making silicon-insulator-polysilicon infrared image de will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-919947