Method of making silicon diaphragm pressure sensor

Details Method of making silicon diaphragm pressure sensor Method of making silicon diaphragm pressure sensor

1985-01-25

1987-06-09

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29 2535, 29576T, 29576E, 29576C, 29580, 148 332, 148DIG12, 148DIG159, 148DIG168, 148174, 357 26, H01L 21428, H01L 2984

Patent

active

046709690

ABSTRACT:
A method of making a silicon diaphragm pressure sensor includes forming an oxide film on one surface of a monocrystalline silicon substrate. A polycrystalline silicon layer is formed on the oxide film. The oxide film may be partly removed before the formation of the polycrystalline silicon layer. The polycrystalline silicon layer is heated and melt to recrystallize the same, thereby converting the polycrystalline silicon layer into a monocrystalline silicon layer. On the monocrystalline silicon layer may be epitaxially grown an additional monocrystalline silicon layer. By using the oxide film as an etching stopper, a predetermined portion of the substrate is etched over a range from the other surface of the substrate to the oxide film, thereby providing a diaphragm of the pressure sensor.

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Kabayashi et al., IEEE Electron Device Lett., vol. EDL-4, No. 5, May 1983, pp. 132-134.
Ghandi, VLSI Fabrication Principles-Silicon and Gallium Arsenide, John Wiley & Sons, New York, pp. 421-424.

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