Method of making silicon carbide semiconductor device having...

Details Method of making silicon carbide semiconductor device having... Method of making silicon carbide semiconductor device having...

2009-03-18

2010-11-02

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Forming schottky junction

Compound semiconductor

C438S571000, C438S573000, C257S077000, C257S471000, C257S483000, C257S493000, C257S496000

Reexamination Certificate

active

07825017

ABSTRACT:
A silicon carbide semiconductor device provided as a semiconductor chip includes a substrate, a drift layer on the substrate, an insulation film on the drift layer, a semiconductor element formed in a cell region of the drift layer, a surface electrode formed on the drift layer and electrically coupled to the semiconductor element through an opening of the insulation film, and a passivation film formed above the drift layer around the periphery of the cell region to cover an outer edge of the surface electrode. The passivation film has an opening through which the surface electrode is exposed outside. A surface of the passivation film is made uneven to increase a length from an inner edge of the opening of the passivation film to a chip edge measured along the surface of the passivation film.

REFERENCES:
patent: 2006/0086939 (2006-04-01), Carta et al.
patent: 2007/0090370 (2007-04-01), Nakayama et al.
patent: 2007/0126086 (2007-06-01), Kanata et al.
patent: 2008/0237608 (2008-10-01), Richieri
patent: A-60-97672 (1985-05-01), None
patent: A-60-207340 (1985-10-01), None
patent: A-63-10571 (1988-01-01), None
patent: 2001-291860 (2001-10-01), None
patent: A-2004-349383 (2004-12-01), None
patent: A-2005-286197 (2005-10-01), None
patent: 2006-210569 (2006-08-01), None
patent: A-2007-201247 (2007-08-01), None
Office Action issued from the Japanese Patent Office on Mar. 2, 2010 in the corresponding Japanese patent application No. 2008-071308 (English translation thereof).

Affiliated with

Also associated with

Rating

Method of making silicon carbide semiconductor device having... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making silicon carbide semiconductor device having..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making silicon carbide semiconductor device having... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4196896