Chemistry of inorganic compounds – Silicon or compound thereof – Binary compound
Patent
1989-03-15
1991-06-04
Chaudhuri, Olik
Chemistry of inorganic compounds
Silicon or compound thereof
Binary compound
423346, C01B 3136
Patent
active
050212303
ABSTRACT:
A process for production of high purity, sub-micron size, silicon carbide by reacting a mixture of silica powder and carbon powder in a mixing reactor. The reactor, initially pressurized with a non-reactive gas, is indirectly heated and when the charge reaches reaction temperature a vacuum is applied. The charge is kept under a high vacuum until the reaction is complete, and is agitated to encourage release of carbon monoxide. After removal of excess carbon by low temperature oxidation, the product typically contains in excess of 99.5% silicon carbide of the beta-phase, has a surface area greater than 10m.sup.2 /gm, is free of carbon and contains no detectable unreacted silica. The product requires no post production treatment such as grinding and acid leaching.
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Chaudhuri Olik
Cuomo Lori F.
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