Method of making semiconductor wafers

Details Method of making semiconductor wafers Method of making semiconductor wafers

1997-10-29

1999-10-05

Niebling, John F.

Semiconductor device manufacturing: process

Semiconductor substrate dicing

438690, 438691, 438692, 438928, 438906, 438959, 438964, 438974, 438977, H01L 21301, H01L 2146, H01L 2178

Patent

active

059638214

ABSTRACT:
This invention provides a method for efficiently making semiconductor wafers having uniform thickness where the thickness of the back side does not influence the front side and where the front side of the wafer is capable of being distinguished from the back side. A semiconductor ingot is sliced to obtain wafers. The sliced surfaces of the wafers are flattened. The flattened wafer is etched in alkaline etching solution. Both the front and back sides of the etched wafer are polished using a double sided polishing apparatus so that the front side is a mirror surface and an unevenness remains on the back side to distinguish the front and back sides, thereof. The polished wafer is cleaned.

REFERENCES:
patent: 5800725 (1998-09-01), Kato et al.
patent: 5821167 (1998-10-01), Fukami et al.
patent: 5827779 (1998-10-01), Masumura et al.
patent: 5851924 (1998-12-01), Nakazawa et al.
patent: 5899743 (1999-05-01), Kai et al.

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