Method of making semiconductor trench capacitor cell having a bu

Details Method of making semiconductor trench capacitor cell having a bu Method of making semiconductor trench capacitor cell having a bu

1995-04-13

1996-08-13

Thomas, Tom

Fishing, trapping, and vermin destroying

437 60, 437203, H01L 218242

Patent

active

055455832

ABSTRACT:
A semiconductor trench capacitor structure having a first level aligned insulation structure and buried strap that extends from within the trench into the semiconductor substrate. The semiconductor trench capacitor structure may be fabricated by forming a shallow trench extending into both the trench capacitor and the semiconductor substrate, depositing and densifying an insulating material within the shallow trench and using a resist layer to define and etch a strap trench aligned with the wall of the shallow trench, depositing a layer of conductive material within the strap trench and followed by depositing an insulating material therein.

REFERENCES:
patent: 4801988 (1989-01-01), Kenney
patent: 4918502 (1990-04-01), Kaga
patent: 4988637 (1991-01-01), Dhong
patent: 5198995 (1993-03-01), Dennard
patent: 5223447 (1993-06-01), Lee
patent: 5360758 (1994-11-01), Bronner et al.

Affiliated with

Also associated with

Rating

Method of making semiconductor trench capacitor cell having a bu does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making semiconductor trench capacitor cell having a bu, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making semiconductor trench capacitor cell having a bu will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1047735