Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1975-04-04
1978-05-09
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148 15, 148171, 156610, 156612, 357 4, 357 16, H01L 2120, H01L 2906
Patent
active
040885151
ABSTRACT:
A method of growing superlattice crystals containing alternating layers of two semiconductor materials in which misfit and threading dislocations are eliminated by growing the layers of superlattice crystal to some thickness less than that which will generate new dislocations, and matching the average lattice parameter of the superlattice with that of substrate so misfit dislocations between the superlattice and the substrate are not formed.
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Abrahams et al., "Dislocation Morphology in Graded Heterojunctions: GaAs.sub.rx P.sub.x " J. of Materials Science, vol. 4, 1969, pp. 223-235.
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Ewing et al., "Compositional Inhomogeneities in GaAs.sub.rx P.sub.x Alloy Epitaxial Layers" J. Applied Physics, vol. 39, No. 13, Dec. 1968, pp. 5943-5948.
Blakeslee A. Eugene
Matthews John W.
Henderson John W.
International Business Machines - Corporation
O'Flaherty John
Rutledge L. Dewayne
Saba W. G.
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