Method of making semiconductor structure with germanium implant

Details Method of making semiconductor structure with germanium implant Method of making semiconductor structure with germanium implant

1993-12-10

1994-11-01

Fourson, George

Fishing, trapping, and vermin destroying

437 35, 437 44, H01L 21265

Patent

active

053607490

ABSTRACT:
A semiconductor structure with germanium implant is provided for reducing V.sub.T shifts at the channel edges thereby minimizing short channel effects and subthreshold currents at or near the substrate surface. The semiconductor structure is adapted to receive non-perpendicular implant of germanium in the juncture between the channel and the source/drain regions as well as in the juncture between field oxide channel stop implant and source/drain regions. By carefully and controllably placing the germanium at select channel and field regions, segregation and redistribution of threshold adjust implant and channel stop implant dopant materials is substantially minimized. Reducing the redistribution of such materials provides a reduction in the short channel effects and, particularly, a reduction in substrate surface current or DIBL-induced current.

REFERENCES:
patent: 4835112 (1989-05-01), Pfiester et al.
patent: 5108954 (1992-04-01), Sandhu et al.
patent: 5250455 (1993-10-01), Ohzone et al.
Wolf, S. "Silicon Processing for the VLSI Era", Lattice Press, Sunset Beach, CA. (1990) pp. 327-332 and 354-363.
Baker et al., "The Influence of Fluorine on Threshold Voltage Instabilities in P+ Polysilicon gated P-Channel MOSFETs", IEDM, (1989), pp. 443-446.
Yoon et al., "MOS Characteristics of NH.sub.3 -Nitrided N.sub.2 O-Grown Oxides", IEEE, (1993), pp. 179-181.
Sung et al., "A Comprehensive Study on p.sup.+ Polysilicon-Gate MOSFET's Instability with Fluorine Incorporation", IEEE, (1990), pp. 2312-2320.
Lin et al., "The Effect of Fluorine on MOSFET Channel Length", IEEE, (1993), pp. 469-471.
Pfiester et al., "Improved MOSFET Short-Channel Device Using Germanium Implantation", IEEE, (1988), pp. 343-346.
Acovic et al., "Arsenic Source and Drain Implant Induced Degradation of Short-Channel Effects in NMOSFET's", IEEE, (1993), pp. 345-347.
Panteleev et al., "Influence of Elastic Stresses on Diffusion Processes in Semiconductors", Sov. Phys. Solid State 20(2), (Feb. 1978), pp. 324-325.
Sadana et al., "Enhanced Short-Channel Effects in NMOSFETs Due to Boron Redistribution Induced by Arsenic Source and DRain Implant", IEDM, (1992), pp. 849-852.
Wright et al., "The Effect of Fluorine in Silicon Dioxide Gate Dielectrics", IEEE, (1989), pp. 879-889.
Hsieh et al., "Characteristics of MOS Capacitor of BF.sub.2 or B Implanted Polysilicon Gate with and without POCI.sub.3 Co-doped", IEEE, (1993), pp. 222-224.
Ng et al., "Suppression of Hot-Carrier Degradation in Si MOSFET's by Germanium Doping", IEEE, (1990), pp. 45-47.

Affiliated with

Also associated with

Rating

Method of making semiconductor structure with germanium implant does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making semiconductor structure with germanium implant , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making semiconductor structure with germanium implant will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1802171