Method of making semiconductor photoelectric conversion device

Fishing – trapping – and vermin destroying

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437 4, 437100, 437101, 437109, 427 39, 427 74, 136258, 136256, H01L 3118

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047673362

ABSTRACT:
In a semiconductor photoelectric conversion device in which a first light-transparent conductive layer serving as an electrode is formed on a light transparent substrate, a non-single-crystal semiconductor laminate member having formed therein at least one PIN junction is formed on the first conductive layer and a second conductive layer serving as another electrode is formed on the semiconductor laminate member, the non-single-crystal semiconductor layer on the side of the first conductive layer is made of Si.sub.x C.sub.1-x (0<x<1), and the boundary between the first conductive layer and semiconductor laminate member is formed by a first uneven surface including a number of convexities. Further, the second conductive layer is reflective, and the boundary between the semiconductor laminate member and the second conductive layer is formed by a second uneven surface.

REFERENCES:
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patent: 4532537 (1985-07-01), Kane
patent: 4554727 (1985-11-01), Deckman et al.
patent: 4571448 (1986-02-01), Barnett
H. Munokata et al., Appl. Phys. Lett., vol. 37, pp. 536-537, (1980).

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